Revealing Stacking Configuration of WS2/WSe2 Heterostructures by Low-frequency Raman Spectroscopy
- 발행기관 서강대학교 일반대학원
- 지도교수 정현식
- 발행년도 2026
- 학위수여년월 2026. 2
- 학위명 석사
- 학과 및 전공 일반대학원 물리학과
- 실제URI http://www.dcollection.net/handler/sogang/000000082394
- UCI I804:11029-000000082394
- 본문언어 영어
- 저작권 논문은 저작권에 의해 보호받습니다.
목차
I. Introduction 1
II. Theory 6
A. Transition Metal Dichalcogenides (TMDs) 6
B. Tungsten Disulfide (WS2) 7
C. Tungsten Diselenide (WSe2) 9
III. Experiments 11
A. Sample Fabrication 11
(1) Sample transfer 11
(2) AFM cleaning 12
B. Raman Spectroscopy 13
C. Photoluminescence 15
D. Second Harmonic Generation 16
E. Selected Area Electron Diffraction[31] 18
F. Chemical Vapor Deposition[32, 33] 20
IV. Results & Discussion 22
A. Determinization and categorization of twist angle 22
(1) Determinization and categorization of exfoliated heterostructure’s twist
angle 22
(2) Fabrication of CVD-grown 1L-WS2/1L-WSe2 heterostructure and
determination of its twist angle 25
B. Low-frequency Raman signal of 1L-WS2/1L-WSe2 heterostructure 27
(1) Low-frequency Raman signal of the CVD-grown 1L-WS2/1L-WSe2
heterostructure 27
(2) Low-frequency Raman signal of the exfoliated 1L-WS2/1L-WSe2
heterostructure 30
C. SAED and PL measurements 31
(1) Fabrication of heterostructures on TEM membrane 31
(2) Polarized SHG signal of heterostructures on TEM membrane 33
(3) Stacking configurations of two heterostructures with slight differences of
twist angle 34
(4) TEM measurement of heterostructures 35
(5) PL measurement of heterostructures 37
D. Low-frequency Raman mapping. 39
V. Summary 42
VI. References 43

