Bandwidth Extension via Inductive peaking : Comparative Analysis and a T-Coil Peaking Topology
- 발행기관 서강대학교 일반대학원
- 지도교수 Jinho Jeong
- 발행년도 2025
- 학위수여년월 2025. 8
- 학위명 석사
- 학과 및 전공 일반대학원 전자공학과
- 실제 URI http://www.dcollection.net/handler/sogang/000000081712
- UCI I804:11029-000000081712
- 본문언어 영어
- 저작권 서강대학교 논문은 저작권 보호를 받습니다.
초록 (요약문)
This paper presents a study on bandwidth extension techniques for resistive-feedback inverter (RFI) amplifiers, with a focus on inductive peaking and a novel T-coil-based approach. Various inductive peaking topologies—such as series, shunt and gate —are analyzed to understand their characteristics and limitations. Based on this analysis, a new peaking technique combining gate and over-shunt peaking is proposed using a compact T- coil structure. The proposed design achieves significant bandwidth enhancement with reduced inductance, resulting in improved area and power efficiency. The amplifier, fabricated in a 28 nm FD-SOI CMOS process, occupies 0.0094 mm² and consumes 5.6 mW. Measured results show a gain of 16.2 dB, a 3-dB bandwidth of 31.5 GHz, and a gain- bandwidth product of 203.38 GHz. Eye diagram measurements confirm compliance with 28 Gbps NRZ signaling, showing excellent signal integrity metrics. Compared to existing broadband CMOS amplifiers, the proposed design achieves competitive bandwidth performance with reduced area and power consumption, offering an efficient solution for next-generation high-speed I/O systems.
more목차
1. Introduction 1
2. Inductive Peaking Topologies 5
2.1 RFI Amplifier 5
2.2 Series Peaking 9
2.3 Gate Peaking 12
2.4 Shunt Peaking 15
2.5 Over-shunt Peaking 18
3. Circuit Design 22
3.1 T-Coil Peaking 22
3.2 Three-stage T-Coil Peaking Amplifier 26
4. Measurement 30
4.1 S-parameter measurements 30
4.2 Eye diagram measurements 34
5. Conclusion 39
Reference 40
