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Magnetic Response of Non-linear Hall Effect in REPtBi (RE = Y ,Gd)

  • 이재창 (Lee JaeChang, 서강대학교 일반대학원)

초록 (요약문)

The non-linear Hall effect, as a novel current transport phenomenon, has significant interest. However, it has become evident that the well-known Berry Curvature Dipole, which generates second-order conductivity, is insufficient to fully explain the observed phenomena. Therefore, we decompose the origin of the non-linear Hall effect by considering contributions from the time-reversal symmetry-odd Drude term and interband terms. Moreover, to better understand the origins of this effect, we explore the dependence of the 2ω Hall voltage on factors such as carrier type, magnetic transitions, and rare-earth substitutions. The temperature dependence reveals a significant change in the 2ω signal around the Néel temperature, corresponding to the onset of antiferromagnetic ordering, which impacts the generation of Berry curvature dipoles. Additionally, the study compares the results for GdPtBi with those of the non-magnetic counterpart, YPtBi, highlighting differences in carrier types and the role of the magnetic field in modulating the nonlinear Hall signal. This work provides insights into the complex mechanisms driving the non-linear Hall effect in Weyl semimetals and Heusler compounds, contributing to the growing understanding of these materials' topological and transport propertie

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목차

I. Introduction 1
II. Experimental Method
A. Sample preparation 4
B. X-ray diffraction & Laue diffraction 4
C. Magnetic and transport measurements 5
D. Non-linear Hall effect measurement 6
III. Results and Discussion
A. Sample characterization 7
B. Magnetic and transport properties 9
C. Nonlinear Hall effect
i. Carrier type dependence of GdPtBi 14
ii. Temperature dependence of GdPtBi 19
iii. Rare earth element dependence of REPtBi(RE = Gd vs Y) 22
IV. Conclusion 26
V. References 27

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