서강대학교

목차

1. Introduction 1
2. Theory 5
2.1 X-ray scattering 5
2.1.1 X-ray reflectivity from a surface (single layer model) 6
2.1.2 X-ray reflectivity from multiple interfaces 16
2.1.3 X-ray reflectivity analysis with model free fitting method 23
2.1.4 Grazing Incidence Wide/Small Angle X-ray Scattering (GIWAXS/GISAXS) 26
2.2 Electroluminescent quantum dot light emitting diode 32
2.2.1 Quantum dot 32
2.2.2 Quantum confinement effect 36
2.2.3 Electroluminescent quantum dot light emitting diode 41
3. Experiments 44
3.1 Sample preparation 44
3.1.1 Materials and blended solution 44
3.1.2 Device and sample preparation 46
3.2 Structure and morphology measurement 50
3.2.1 X-ray reflectivity 50
3.2.2 Grazing incidence small angle X-ray scattering 52
3.2.3 Transmission electron microscopy 53
3.2.4 Atomic force microscopy 53
3.3 Electric and optical characteristic measurement 54
3.4 Computational methods 54
4. Correlation between the structural morphology and device characteristics of quantum dot based emission layer blended with small molecular hole transport material 55
4.1 Introduction 55
4.2 Results and discussion 58
4.3 Concluding remarks 92
5. Enhancing Device Characteristics of InP Quantum Dot LED through Structural Modification with Polyethylene Glycol Blend 93
5.1 Introduction 93
5.2 Results and discussion 96
5.3 Concluding remarks 123
References 124