Impact of sidewall spacer materials and gate underlap length on negative capacitance double-gate tunnel field-effect transistor (NCDG-TFET)
- 주제(키워드) 도움말 Tunnel field-effect transistor , Negative capacitance , Sidewall spacer , Subthreshold swing , Ambipolar current
- 발행기관 PERGAMON-ELSEVIER SCIENCE LTD
- 발행년도 2022
- 총서유형 Journal
- 본문언어 영어
