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Design of bondwire structure for ultra-broadband chip-to-chip interconnect

초록 (요약문)

In this paper, an ultra-wideband low-loss wire bonding technique with a bandwidth of 110 GHz or more applicable to ultra-fast interconnect packaging technology was designed and manufactured to verify its validity. In conventional heterogeneous chip interconnect, it is common to reduce the distance between substrates to reduce interconnect loss. However, signal interference occurs between substrates, not along the transmission line, and problems such as coupling and resonance between substrates may occur. Therefore, increasing the distance between substrates can solve the problem of signal interference, but the length of the wire increases the parasitic inductance, which causes impedance mismatch, resulting in performance degradation. Therefore, this study proposes a structure that can suppress interference between substrates and solve impedance mismatch by using metal structures in the interconnect process. Proposed method uses an encapsulation process using epoxy, so it protects chips and wires and ensures mechanical impact reliability and reproducibility of the manufactured package. It was confirmed that the manufactured bond wire interconnect structure had an average insertion loss of 3.8 dB superior to the conventional CPW (Coplanar Waveguide) interconnect structure in the W-band (75-110 GHz) and had a wide bandwidth of 110 GHz or more.

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