A Novel 4H-SiC Double Trench MOSFET with built-in MOS Channel Diode for Improved Switching Performance
- 주제어 (키워드) 4H-SiC , double trench , body diode , reverse recovery , parasitic capacitance , switching loss
- 발행기관 서강대학교 일반대학원
- 지도교수 김광수
- 발행년도 2023
- 학위수여년월 2023. 2
- 학위명 석사
- 학과 및 전공 일반대학원 전자공학과
- 실제 URI http://www.dcollection.net/handler/sogang/000000069869
- UCI I804:11029-000000069869
- 본문언어 영어
- 저작권 서강대학교 논문은 저작권 보호를 받습니다.
초록 (요약문)
This study proposed a novel 4H Silicon Carbide (4H-SiC) double trench metal-oxide-semiconductor field-effect-transistor (DTMCD-MOSFET) structure with a built-in MOS channel diode. Further, its characteristics were analyzed using TCAD simulation. The DTMCD-MOSFET comprised active and dummy gates that were divided up and down; the channel diode operated through the dummy gate and p-base and N+ source regions at the bottom of the dummy gate. Because the built-in channel diode was positioned at the bottom, the DTMCD-MOSEFT minimized static deterioration. Despite having a 5.2% higher specific on-resistance (Ron-sp) than a double-trench MOSFET (DT-MOSFET), the DTMCD-MOSFET exhibited a significantly superior body diode and switching properties. In comparison to the DT-MOSFET, its turn-on voltage (VF) and reverse recovery charge (Qrr) were decreased by 27.2% and 30.5%, respectively, and the parasitic gate-drain capacitance (Crss) was improved by 89.4%. Thus, compared with the DT-MOSFET, the total switching energy loss (Etot) was reduced by 41.4%.
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