Improving the Performance of Organic Photodetector Using Hf-SnO2 as an Electron Transport Layer
- 주제(키워드) 도움말 Hf-SnO2 , Electron Transport Layer , Organic Photodetector , Leakage Current , Detectivity
- 발행기관 AMER SCIENTIFIC PUBLISHERS
- 발행년도 2021
- 총서유형 Journal
- 본문언어 영어
초록/요약 도움말
The adequate control of dark current is the key to achieving high detectivity in organic photodetectors (OPDs). In this study, we incorporated hafnium (Hf), a rare earth mineral, into tin oxide (SnO2) to form hafnium doped SnO2 (Hf-SnO2) as an electron transport layer (ETL) in OPDs. It was observed that the performance of OPDs with a Hf-SnO2 electron transport layer in OPDs is superior to that of conventional SnO2 as it significantly reduces the leakage current recording a high specific detectivity of 8.70 x 10(11) Jones and a bandwidth of 229.63 kHz at -1 V and 525 nm. Furthermore, Hf-SnO2 can be processed at a low temperature, thereby broadening the fields of applications such as flexible devices and large area cells.
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