Nanoelectromechanical-Switch-Based Ternary Content-Addressable Memory (NEMTCAM)
- 주제(키워드) 도움말 Switches , Nanoelectromechanical systems , Random access memory , Nonvolatile memory , Force , Resistance , Memory management , Monolithic 3-D (M3D) , nanoelectromechanical (NEM) memory switch , nonvolatile memory (NVM) , ternary content-addressable memory (TCAM)
- 발행기관 IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행년도 2021
- 총서유형 Journal
- 본문언어 영어
초록/요약 도움말
A tristate-nanoelectromechanical-switch-based ternary content-addressable memory (NEMTCAM) is proposed for the first time. In the proposed unit NEMTCAM cell, a single nanoelectromechanical (NEM) memory switch replaces two static random access memory cells. Due to the monolithic 3-D (M3D) integration and nonvolatile property of NEM memory switches, the proposed NEMTCAM achieves an 86.3% smaller area, 75.0% lower dynamic power consumption, and a 76.6% higher search speed than conventional ternary content-addressable memory (TCAM) in addition to a negligible static leakage current.
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