Nanoelectromechanical-Switch-Based Binary Content-Addressable Memory (NEMBCAM)
- 주제(키워드) 도움말 Nanoelectromechanical systems , Switching circuits , Switches , Delays , Transistors , Metals , Memory management , CMOS-NEM hybrid circuit , content-addressable memory (CAM) , nanoelectromechanical (NEM) memory switch
- 발행기관 IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행년도 2021
- 총서유형 Journal
- 본문언어 영어
초록/요약 도움말
This paper proposes a novel nanoelectromechanical-switch-based binary content-addressable memory (NEMBCAM) for the first time. A nanoelectromechanical (NEM) memory switch serves as both a nonvolatile memory and a switchable current path in an NEMBCAM unit cell. Owing to monolithic three-dimensional integration, NEMBCAM achieves a smaller unit cell area in comparison with conventional complementary metal-oxide-semiconductor-only binary content-addressable memory. Small unit cell area results in reduced match line (ML) capacitance, which lowers search energy consumption. Furthermore, a shorter search delay is achieved owing to the near-perfect on/off characteristic of the NEM memory switch.
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