High Performance 4H-SiC MOSFET with Deep Source Trench
- 주제(키워드) 4H-SiC , double trench , source trench , superjunction , parasitic capacitance , switching energy loss
- 발행기관 서강대학교 일반대학원
- 지도교수 김광수
- 발행년도 2021
- 학위수여년월 2021. 8
- 학위명 석사
- 학과 및 전공 일반대학원 전자공학과
- UCI I804:11029-000000066115
- 본문언어 영어
- 저작권 서강대학교 논문은 저작권보호를 받습니다.
초록/요약
In this paper, 4H-SiC Deep Source Trench MOSFET (DST-MOSFET) is proposed and investigated by conducting numerical TCAD simulations. The DST-MOSFET includes a P-pillar formed along the deep source trench and a side P+shielding region (SPR) replacing the gate bottom P+shielding region. Due to the superjunction formed by the P-pillar and N-drift region, the static characteristics of DST-MOSFET are superior to those of Double Trench MOSFET (DT-MOSFET) and Source Trench MOSFET (ST-MOSFET). The Specific on resistance and Baliga`s Figure of Merit (FOM) of DST-MOSFET are improved by 36% and 64% compared to DT-MOSFET, respectively, and by 23% and 51% compared to ST-MOSFET, respectively. In addition, the SPR reduces the gate to drain capacitance of the DST-MOSFET and improves the switching characteristics. As a result, the total switching energy loss of DST-MOSFET is improved by 38% compared to the DT-MOSFET and by 27% compared to the ST-MOSFET
more