3.3kV 4H-SiC MOSFET with high reliability characteristics
3.3kV급 4H-SiC MOSFET 신뢰성 특성 연구
- 주제(키워드) Silicon carbide , 3300 V 4H-SiC MOSFET , electric field crowding , switching loss , high temperature , short-circuit withstand capability , thermal runaway.
- 발행기관 서강대학교 일반대학원
- 지도교수 김광수
- 발행년도 2021
- 학위수여년월 2021. 2
- 학위명 석사
- 학과 및 전공 일반대학원 전자공학과
- UCI I804:11029-000000065639
- 본문언어 영어
- 저작권 서강대학교 논문은 저작권보호를 받습니다.
초록/요약
A 3300 V 4H-SiC MOSFET with a dummy polysilicon connected to the source and the p+ region inserted underneath the p-base (DP-MOSFET) is proposed. The improvements in the switching performance and short-circuit withstand capability are confirmed through technology computer-aided design simulation. Compared with the conventional 4H-SiC MOSFET (C-MOSFET), the dynamic figure of merit (FOM = Ron-sp × QGD) of the DP-MOSFET is effectively improved without deteriorating the Baliga’s figure of merit (FOM = BV2 / Ron-sp). In addition, the low saturation current alleviates the heat dissipation during turn-on, hence, the short-circuit withstand time (tsc) increases by almost two times. The proposed DP-MOSFET can be considered as one of the most promising candidates for high-performance, high-frequency and high-power applications.
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