High Efficiency 1700V 4H-SiC UMOSFET with Local Floating Superjunction
- 주제(키워드) 4H-SiC , UMOSFET , Local floating superjunction , Energy loss , Efficiency
- 발행기관 서강대학교 일반대학원
- 지도교수 김광수
- 발행년도 2020
- 학위수여년월 2020. 2
- 학위명 석사
- 학과 및 전공 일반대학원 전자공학과
- UCI I804:11029-000000064863
- 본문언어 영어
- 저작권 서강대학교 논문은 저작권보호를 받습니다.
초록/요약
This paper introduces a 4H-SiC UMOSFET structure with improved efficiency. Compared to conventional p-shielding UMOSFET, the proposed 4H-SiC UMOSFET with a local floating superjunction (LFS) exhibits lower on-resistance while maintaining a breakdown voltage of 1700 V. In addition, it shows an improvement in switching loss. To verify the improvement, the conventional p-shielding UMOSFET and the proposed UMOSFET are modeled for energy loss and junction temperature. Also body diode characteristic and UIS test are confirmed. The proposed UMOSFET showed a 48% reduction in the specific on-resistance and a 20.6% reduction in the switching loss. Electrical characteristics is simulated by sentaurus TCAD. And power circuit is simulated with modeled UMOSFET by PSIM, a power circuit simulator.
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