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The Origin of High Photoelectrochemical Performance at (040) Facet-Engineered BiVO4 Photoanode

초록/요약

In this study, the photochemical and optical process of photoanode which consists of (040) crystal facet engineered BiVO4 nanoparticle has been investigated for the enhancement of photoelectrochemical performance. A (040) crystal facet engineered BiVO4 ((040)-BVO) photoanode showed the highest photocurrent density due to the improved charge carrier mobility compared with other crystal facets. Even though (040)-BVO photoanode showed the higher charge carrier mobility and photocatalytic activity for solar energy conversion, the detailed optical and photochemical process based on the synthetic mechanism for the high photocatalytic performance have not been investigated clearly yet. The photocurrent density of the (040)-BVO photoanode is determined as 2.4 mA∙cm-2 at 2.08 V (vs RHE) and produces 28.1% of the incident photon-to-current conversion efficiency at 0.88 V (vs RHE) under AM 1.5 G illumination. Here, the relationship between the aspect ratio of (040) crystal facet surface area to others and the function of Mg2+ and Ti3+ coordination complexes on the synthetic process as structure directing absorbate (SDA) for controlling the morphology of (040)-BVO has been investigated. This study can provide a promising approach for the synthesis of crystal facet controlled metal oxide photocatalysts using a metal ion coordination complex as SDA.

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