A Study on the Fabrication and Analysis of 4H-SiC Schottky Barrier Diode with the Comb-Shaped Field Plate
- 발행기관 서강대학교 일반대학원
- 지도교수 김광수
- 발행년도 2017
- 학위수여년월 2017. 2
- 학위명 석사
- 학과 및 전공 일반대학원 전자공학과
- 실제URI http://www.dcollection.net/handler/sogang/000000061223
- 본문언어 영어
- 저작권 서강대학교 논문은 저작권보호를 받습니다.
초록/요약
Silicon Carbide(SiC) is promising material in power semiconductor device for its wide band gap and high thermal conductivity property. Especially a SiC Schottky Barrier Diode(SBD) has merit for high voltage application retaining low on-resistance and high switching speed. However electric field crowding at contact edge degrades blocking characteristic of SiC-SBD, so research of edge termination techniques are issued to solve the problem. In this paper, we proposed comb-shaped field plate which improves electric field distribution of device to show higher breakdown voltage compared to conventional field plate structure. The main principle of proposed structure is distributing inner electric field in blocking mode with stepped oxide structure formed by several trench. We designed the structure with simulation, fabricated and measured the test devices to verify the effect of proposed structure. The proposed devices had 39% improved breakdown voltage without loss of on-resistance compared to SiC-SBD with conventional field plate.
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