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학술논문
3.3-kV 4H-SiC Split-Gate DMOSFET with Floating p+ Polysilicon for High-Frequency Applications- [Cha, Kyuhyun, Yoon, Jongwoon, Kim, Kwangsoo]
- ELECTRONICS , 2021 , Vol.10 No.6
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학술논문
3.3 kV 4H-SiC MOSFET with embeded hetero junction body diode for low switching loss- [Na, Jaeyeop, Kim, Kwansoo]
- 2022 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC) , 2022 , 2022